Buku Persamaan Ic Dan Transistor Amplifier

Daftar Persamaan Transistor. IC memory 24c16, Ic vertikal LA 7840 dan STR F6654. Bagi-bagi buku dan majalah (sudah. Rekan-rekan penggemar elektroteknik,saya punya 2 buku berupa 'Kumpulan data dan persamaan transistor' dan. Mendapatkan 4 buku dan tiga keping DVD. Simbol Dan Bentuk Fisik Transistor. J cole forest hills drive album download. Download buku persamaan ic dan transistor pdf. List of ebooks and manuels about Download buku persamaan ic dan transistor pdf. Transistor d400 persamaan Search Results. Yaitu memasukkan input dari speaker yang berhambatan 8 ohm kemudian input tersebut diperkuat dengan transistor dan Op Amp. Pengertian Amplifier dan Op - Amp. Yaitu rangkaian.

DaftarPersamaan Transistor

1. 2sc3182 / 2sa1265, +140 /-140 volt, 10 ampere.
2. 2sc3181 / 2sa1264, +120 /-120 volt, 8 ampere.
3. 2sc3180 / 2sa1263, +80 / -80 vol, 6 ampere.
4. 2sc5200 / 2sa1943, +230 / -230 volt, 15 amp.
5. 2sc2922 / 2sa1216, +180 / -180 volt, 17 amp.
6. 2sc2921 / 2sa1215, +160 / -160 volt, 15 amp.
7. 2sc2837 / 2sa1186, +150 / -150 volt, 10 amp.
8. 2sc4468 / 2sa1695, +200 / -200 volt, 10 amp.
9. 2sc6011 / 2sa2151, +200 / -200 volt, 15 amp.
10. 2sc3281 / 2sa1302, +200 / -200 volt, 15 amp.
11. 2sc3280 / 2sa1301, +160 / -160 volt, 12 amp.
12. 2sc3284 / 2sa1303, +150 / -150 volt, 14 amp.
13. TIP3055 / TIP2955, +100 / -100 volt. 15 A

Type Designator: A1015

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage Vcb : 50 V

Maximum Collector-Emitter Voltage Vce : 50 V

Maximum Emitter-Base Voltage Veb : 5 V

Maximum Collector Current Ic max : 0.15 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 80 MHz Bernard tschumi wikipedia.

Forward Current Transfer Ratio (hFE), MIN: 130

Noise Figure, dB: -

Package: SOT23

A1015 Transistor Equivalent Substitute - Cross-Reference Search

A1015 Datasheet (PDF)

1.1. 2sa1015-gr.pdf Size:504K _update

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

1.2. 2sa1015-y.pdf Size:504K _update

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

1.3. a1015s.pdf Size:263K _update

A1015S 风光欣技术资料 —PNP Silicon— PNP Transistors ■■ APPLICATION：Low Frequency Amplifier Applications. ■■ MAXIMUM RATINGS（Ta=25℃） PARAMETER SYMBOL RATING UNIT VCBO -50 V Collector-base voltage VCEO -50 V Collector-emitter voltage VEBO -5 V Emitter-base voltage IC -0.15 A Collector current PC 0.3 Collector Power Dissipation W Tj 150 ℃ Junc

1.4. 2sa1015-o.pdf Size:504K _update

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Capable of 0.4Watts of Power Dissipation. PNP Silicon • Collector-current 0.15A • Collector-base Voltage 50V Plastic-Encapsulate • Operating and storage junction temperature range: -

1.5. 2sa1015lt1.pdf Size:145K _update

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3 Emitter-Base Voltage Vebo -5 V

1.6. bta1015a3.pdf Size:151K _upd

Spec. No. : C306A3-T 查询'BTA1015A3'供应商 Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description • The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. • High voltage and high current : V =-50V(min), I =-150mA(max) CEO C

1.7. 2sa1015l.pdf Size:228K _toshiba

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications • High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C • Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) •

1.8. 2sa1015.pdf Size:227K _toshiba

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications • High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C • Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95

1.9. ksa1015.pdf Size:42K _fairchild_semi

KSA1015 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage : VCBO= -50V • Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA

1.10. 2sa1015.pdf Size:138K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO * Collector Current up to 150mA * High h Linearity FE * Complement to UTC 2SC1815 Lead-free: 2SA1015L Halogen-free: 2SA1015G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plat

1.11. a1015.pdf Size:443K _secos

A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 1 1 1 2Collector 2 2 2 J 3Base 3 3 3 CLASSIFICATION OF hFE A D Millimeter Product-Rank A1015-O A1015-Y A1015-GR REF. B Min. Max. A 4.40 4.70 Range 7

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1.12. 2sa1015k.pdf Size:252K _secos

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of '-C' specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM: 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM: -0.15 A 3 3 H 0.013 0.100 . Collector-Base Voltage

1.13. csa1015.pdf Size:195K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1015 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSC1815 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 50 V

1.14. a1015.pdf Size:337K _htsemi

A1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to C1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collect

1.15. a1015 to-92.pdf Size:192K _lge

A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation

1.16. a1015 sot-23.pdf Size:214K _lge

A1015 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz Complementary to C1815 Dimensions in inches and (millimeters) MARKING: BA MAXIMUM RATINGS

1.17. a1015lt1.pdf Size:166K _wietron

A1015LT1 A1015LT1 TRANSISTOR (PNP) * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless oth

1.18. a1015.pdf Size:720K _wietron

A1015 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Symbol Value Unit V VCEO Collector-Emitter Voltage -50 VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage V -5.0 IC -150 mA Collector Current Continuous 0.4 PD W Total Device Dissipation TA=25°C Junction T

1.19. a1015.pdf Size:334K _willas

FM120-M WILLAS THRU A1015 SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in ord

1.20. hsa1015.pdf Size:45K _hsmc

Spec. No. : HE6512 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.27 MICROELECTRONICS CORP. Page No. : 1/4 HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature....................

1.21. a1015.pdf Size:373K _can-sheng

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES SOT-23 ♦ High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ♦ Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) ♦ Low nio

1.22. a1015 sot-23.pdf Size:309K _can-sheng

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) FEATURES Complementary to C1815 MARKING:BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units （符号） （参数名称） （额定值） （单位） VCBO Collector-Base Vo

1.23. 2sa1015m.pdf Size:926K _blue-rocket-elect

2SA1015M(BR3CG1015M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流容量大,极好的hFE 特性,低噪声,可与2SC1815M(BR3DG1815M)互补。 High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M(BR3D

1.24. fta1015.pdf Size:262K _first_silicon

SEMICONDUCTOR FTA1015 TECHNICAL DATA B C FEATURES TO-92 PNP Transistor DIM MILLIMETERS A 4.70 MAX E MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B 4.80 MAX G C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Units E 1.00 F 1.27 VCBO Collector-Base Voltage -50 V G 0.85 H 0.45 _ H J 14.00 + 0.50 VCEO Collector-Emitter Voltage -50 V L 2.30 F F M 0.51 MAX VEBO Emit

1.25. 2sa1015.pdf Size:775K _kexin

SMD Type or SMD Type TransistICs PNP Transistors 2SA1015 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Low niose: NF=1dB(Typ.) at f=1KHz 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VC

1.26. a1015.pdf Size:538K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO -50 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage

1.27. 2sa1015.pdf Size:284K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba

Datasheet: 2SD0602A, 2SD2098, 2SD2114, 2SD2142, 2SD2150, 2SD2413, 2SD965A, 3DK2222A, AC127, A42, A44, A733, A92, A94, B772, C1815, C945.

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